TQ9147B 查看數據表（PDF） - TriQuint Semiconductor

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TQ9147B

2-Stage AMPS Power Amplifier IC

TriQuint Semiconductor 

TQ9147B

Data Sheet

Package Pinout

RFOUT 1

GND 2

VG3 3

GND 4

5

RFIN 6

GND 7

VG1 8

TQ9147B

16 RFOUT

15 GND

14 VD2

13

GND

12

11 VG2

10 GND

9 VD1

Pin Descriptions

Pin Name

RFOUT

RFIN

VG1

VD1

VG2

GND

Pin #

1,16

6

8

9

11

2, 3, 4, 5, 7,

10, 12, 13,

14, 15

Description and Usage

Power Amplifier output and second-stage supply voltage. Critical, but simple, matching circuit required. Bias choke for VD2

required, local bypass cap recommend, and DC blocking capacitor required.

RF input to power amplifier. Matched to 50 Ω. Internal DC block.

First stage gate voltage. Local bypass cap needed. Set VG1 = -1.5 V or use bias stabilization circuit.

First stage supply voltage. Local bypass cap recommended. Use same voltage as VD2 or use bias stabilization circuit.

Second stage gate voltage. Local bypass cap needed. Required 50 Ω series resistor near device for stability. Set

VG2 = -2.2 V or use bias stabilization circuit.

Ground connections. Provide thermal path for heat dissipation and RF grounding. Very important to place multiple via holes

immediately adjacent to the pins.

Revision AA

TQS Wireless Communications • 2300 NE Brookwood Parkway

8900

• Hillsboro, OR 97124

• (503) 615-9000

June 30November, 1998

• FAX:(503) 615-

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