1SS352 查看數據表（PDF） - TY Semiconductor

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1SS352

ULTRA HIGH SPEED SWITCHING APPLICATION DIODE

TY Semiconductor 

Features

Small Package

Low forward voltage

:VF(3) = 0.98 (Typ)

Fast reverse recovery time :trr = 1.6ns (Typ)

Small total capacitance

:CT = 0.5 pF(Typ)

Product specification

1SS352

SOD-323

1.7+0.1

-0.1

Unit: mm

0.85+0.05

-0.05

2.6+0.1

-0.1

0.475

0.375

1.0max

Absolute Maximum Ratings Ta = 25

P arem eter

Symbol

Rating

Unit

Maximum (peak) reverse voltage

VRM

85

V

Reverse voltage

VR

80

V

Forward current

IFM

200

mA

maximum (peak) voltage current

Io

100

mA

Surge current t=1s

IFSM

1

A

Power dissipation

P

200(*)

mW

Junction Temperature

Tj

125

Storage Temperature Range

Tstg

-55 to+ 125

(*)Mounted on a glass epoxy circuit board of 20 * 20 mm, pad dimension of 4 * 4 mm

Electrical Characteristics Ta = 25

Parem eter

Sym bol

Forward Volatge

VF

Reverse Current

IR

Total Capacitance

CT

Reverse Recovery Tim e

trr

Test Conditions

IF = 1 m A

IF = 10 m A

IF = 100 mA

VR = 30 V;

VR = 80 V;

VR =0, f =1 MHz

IF = 10 mA;

Typ.

0.62

0.75

0.98

0.5

1.6

Max

1.2

0.1

0.5

3

4

Unit

V

A

pF

ns

Marking

Marking

C1

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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