1SS374 查看數據表（PDF） - Toshiba

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1SS374

Silicon Epitaxial Schottky Barrier Type Diode

Toshiba 

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS374

High Speed Switching Application

1SS374

Unit: mm

z Small package

z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

VRM

VR

IFM

15

V

10

V

200 *

mA

Average forward current

IO

100 *

mA

Surge current (10ms)

IFSM

1*

A

Power dissipation

P

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55∼125

°C

Operating temperature range

Topr

−40∼100

°C

JEDEC

TO-236MOD

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

EIAJ

TOSHIBA

Weight: 0.012g

SC-59

1-3G1G

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Unit rating. Total rating = unit rating × 0.7

Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Reverse current

Total capacitance

Symbol

VF (1)

VF (2)

VF (3)

IR

CT

Test

Circuit

Test Condition

― IF = 1mA

― IF = 5mA

― IF = 100mA

― VR = 10V

― VR = 0, f = 1MHz

Min Typ. Max Unit

― 0.18 ―

―

0.23 0.30

V

― 0.35 0.50

―

―

20 μA

―

20

40

pF

Marking

1

2007-11-01

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