1SS397(TE85L)(2007) 查看數據表（PDF） - Toshiba
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1SS397(TE85L) Datasheet PDF : 4 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS397
High Voltage, High Speed Switching Applications
1SS397
Unit: mm
z Low forward voltage
: VF = 1.0V (typ.)
z High voltage
: VR = 400V (min.)
z Fast reverse recovery time : trr = 0.5μs (typ.)
z Small total capacitance : CT = 2.5pF (typ.)
z Small package
: SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
420
V
Reverse voltage
VR
400
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
2
A
Power dissipation
Junction temperature
P
100
mW
JEDEC
Tj
125
°C
EIAJ
―
SC-70
Storage temperature range
Tstg
−55∼125
°C
TOSHIBA
1-2P1D
Weight: 0.006g
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― VR = 300V
― VR = 400V
― VR = 0, f = 1MHz
― IF = 10mA
(Fig.1)
Min Typ. Max Unit
―
0.8
―
V
―
1.0 1.3
―
―
0.1
μA
―
―
1.0
―
2.5 5.0
pF
―
0.5
―
μs
1
2007-11-01
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