1SS83 查看數據表（PDF） - Hitachi -> Renesas Electronics

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1SS83

Silicon Epitaxial Planar Diode for High Voltage Switching

Hitachi -> Renesas Electronics 

1SS83

Absolute Maximum Ratings*2 (Ta = 25°C)

Item

Symbol

Value

Unit

Peak reverse voltage

VRM* 1

300

V

Reverse voltage

VR

250

V

Peak forward current

I FM

625

mA

Non-Repetitive peak forward surge current

I FSM * 2

1

A

Average forward current

IO

200

mA

Power dissipation

Pd

400

mW

Junction temperature

Tj

175

°C

Storage temperature

Tstg

–65 to +175

°C

Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.

2. Within 1s forward surge current.

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Forward voltage

VF

Reverse current

I R1

I R2

Capacitance

C

Reverse recovery time trr

—

—

1.0

V

IF = 100mA

—

—

0.2

µA

VR = 250V

—

—

100

VR = 300V

—

1.5 —

pF

VR = 0V, f = 1MHz

—

—

100 ns

IF = IR = 30mA, Irr = 3mA, RL = 100Ω

2

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