1SS83 查看數據表（PDF） - Renesas Electronics

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1SS83

Silicon Epitaxial Planar Diode for High Voltage Switching

Renesas Electronics 

1SS83

Absolute Maximum Ratings

Item

Peak reverse voltage

Symbol

VRM *1

Value

300

Reverse voltage

VR

250

Average rectified current

IO

200

Peak forward current

IFM

625

Non-Repetitive peak forward surge current IFSM *2

1

Power dissipation

Pd

400

Junction temperature

Tj

175

Storage temperature

Tstg

−65 to +175

Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.

2. Within 1s forward surge current.

(Ta = 25°C)

Unit

V

V

mA

mA

A

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Condition

Reverse current

IR1

IR2

Forward voltage

VF

Capacitance

C

Reverse recovery time trr

—

—

200

nA VR = 250 V

—

—

100

µA VR = 300 V

—

—

1.0

V

IF = 100 mA

—

1.5

—

pF VR = 0 V, f = 1 MHz

—

—

100

ns IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω

Rev.3.00 Apr 18, 2005 page 2 of 4

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