1SV331TPH3F 查看數據表（PDF） - Toshiba
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1SV331TPH3F Datasheet PDF : 3 Pages
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV331
Useful for VCO/TCXO
1SV331
Unit: mm
• Small Package
• High Capacitance Ratio : C1V/C4V = 3.75 (typ.)
• Low Series Resistance : rs = 0.45 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR
10
V
Tj
125
°C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
⎯
VR = 1 V, f = 470 MHz
Marking
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
17
18
19
pF
4.25 4.8 5.43
3.5 3.75 ⎯
⎯
⎯ 0.45 0.7
Ω
V9
1
2007-11-01
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