CMM0224-BD 查看數據表（PDF） - Celeritek, Inc.
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CMM0224-BD Datasheet PDF : 2 Pages
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CMM0224-BD
2.0 to 24.0 GHz
GaAs MMIC
Power Amplifier
Chip Diagram
Advanced Product Information
April 2003
(1 of 2)
Features
❏ Small Size: 43 x 92 mils
❏ High Gain
❏ Directly Cascadable
❏ Medium Power: +24 dBm
❏ Ion-Implanted Active Layers
❏ Silicon Nitride Passivation
Specifications (TA = 25°C, VDD = 8V)
Parameters
Frequency Range
Small Signal Gain
Gain Flatness
Input/Output VSWR
Power Output (@1 dB Gain Compression)
Second Order Intercept Point
Third Order Intercept Point
Current
Absolute Maximum Ratings
Parameter
Drain Voltage
Drain Current
Continuous Power Dissipation
Channel Temperature
Storage Temperature
Mounting Temperature
Input Power
Rating
12V
360 mA
3.0 W
+175°C
-65°C to +175°C
+320°C
+23 dBm
Units
GHz
dB
±dB
—
dBm
dBm
dBm
mA
Min
2.0
11.0
22.0
300
Typ
12.0
0.5
1.8:1
24.0
40.0
30.0
Max
24.0
0.85
2.0:1
330
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
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