20TQ045S 查看數據表（PDF） - Vishay Semiconductors

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20TQ045S

Schottky Rectifier, 20 A

Vishay Semiconductors 

20TQ...S

Vishay High Power Products Schottky Rectifier, 20 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage current

See fig. 2

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

IRM (1)

CT

LS

dV/dt

TEST CONDITIONS

20 A

40 A

TJ = 25 °C

20 A

40 A

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.57

0.73

0.51

0.67

2.7

105

1400

8.0

10 000

UNITS

V

mA

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

TJ, TStg

Maximum thermal resistance,

junction to case

Typical thermal resistance,

case to heatsink

RthJC

RthCS

DC operation

See fig. 4

Mounting surface, smooth and greased

Approximate weight

Mounting torque

minimum

maximum

Marking device

Case style D2PAK

VALUES

- 55 to 150

UNITS

°C

1.50

°C/W

0.50

2

g

0.07

oz.

6 (5)

12 (10)

kgf ⋅ cm

(lbf ⋅ in)

20TQ035S

20TQ040S

20TQ045S

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93955

Revision: 22-Aug-08

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