22RIA(2008) 查看數據表（PDF） - Vishay Semiconductors
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22RIA Datasheet PDF : 8 Pages
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22RIA Series
Vishay High Power Products Medium Power Thyristors
(Stud Version), 22 A
1000
100
TJ= 25°C
10
TJ = 125°C
22RIA Series
1
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady State Value
R thJC = 0.86 K/W
(DC Operation)
0.1
22RIA Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
b) Recommended load line for
10
<=30% rated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
(a)
(b)
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
1
VGD
IGD
0.1
0.001
0.01
(4)
(1) (2) (3)
22RIA Series Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93700
Revision: 19-Sep-08
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