22RIA 查看數據表（PDF） - Vishay Semiconductors
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22RIA Datasheet PDF : 8 Pages
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VS-22RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
-VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
VALUES
8.0
TJ = TJ maximum
2.0
TJ = TJ maximum
1.5
TJ = TJ maximum
10
TJ = - 65 °C
90
TJ = 25 °C
TJ = 125 °C
TJ = - 65 °C
TJ = 25 °C
Maximum required gate trigger
60
current/voltage are the lowest
35
value which will trigger all units
3.0
6 V anode to cathode applied
2.0
TJ = 125 °C
1.0
TJ = TJ maximum, VDRM = Rated value
2.0
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum,
value which will not trigger any
0.2
VDRM = Rated value unit with rated VDRM anode to
cathode applied
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
and storage temperature range
TJ, TStg
-65 to +125
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.86
K/W
Maximum thermal resistance,
case to heat sink
RthCS
Mounting surface, smooth, flat and greased
0.35
TO NUT TO DEVICE
Mounting torque
Lubricated threads
(Non-lubricated threads)
20 (27.5)
0.23 (0.32)
2.3 (3.1)
25
0.29
2.8
lbf in
kgf · m
N·m
Approximate weight
14
g
0.49
oz.
Case style
See dimensions - link at the end of datasheet
TO-48 (TO-208AA)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.21
0.15
120°
0.25
0.25
90°
0.31
60°
0.45
0.34
TJ = TJ maximum
K/W
0.47
30°
0.76
0.76
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 21-Sep-17
3
Document Number: 93700
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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