28F016XD 查看數據表（PDF） - Intel
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28F016XD Datasheet PDF : 54 Pages
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E
28F016XD FLASH MEMORY
5.4 DC Characteristics (Continued)
VCC = 3.3V ± 0.3V, TA = 0°C to +70°C
3/5# = Pin Set High for 3.3V Operations
Sym
Parameter
Notes Min
ICCW VCC Word Program
1,6
Current
ICCE VCC Block Erase
1,6
Current
ICCES VCC Erase Suspend
1,2
Current
IPPS VPP Standby/Read
1
Current
IPPD VPP Deep Power-
1
Down Current
IPPW VPP Word Program
1,6
Current
IPPE VPP Block Erase
1,6
Current
IPPES
VIL
VIH
VPP Erase Suspend
Current
Input Low Voltage
Input High Voltage
VOL Output Low Voltage
VOH1 Output High Voltage
VOH2
VPPLK
VPPH1
VPPH2
VLKO
VPP Erase/Program
Lock Voltage
VPP during Program/
Erase Operations
VPP during Program/
Erase Operations
VCC Erase/Program
Lock Voltage
1
6
-0.3
6
2.0
6
6
2.4
6
VCC-
0.2
3,6 0.0
3
4.5
3 11.4
2.0
Typ Max Unit
Test Condition
8
12 mA VPP = 12.0V ± 5%
Program in Progress
8
17 mA VPP = 5.0V ± 10%
Program in Progress
6
12 mA VPP = 12.0V ± 5%
Block Erase in Progress
9
17 mA VPP = 5.0V ± 10%
Block Erase in Progress
1
4
mA RAS#, CAS# = VIH
Block Erase Suspended
± 1 ± 10 µA VPP ≤ VCC
30 200 µA VPP > VCC
0.2
5
µA RP# = GND ± 0.2V
10
15 mA VPP = 12.0V ± 5%
Program in Progress
15
25 mA VPP = 5.0V ± 10%
Program in Progress
4
10 mA VPP = 12.0V ± 5%
Block Erase in Progress
14
20 mA VPP = 5.0V ± 10%
Block Erase in Progress
30 200 µA Block Erase Suspended
0.8 V
VCC + V
0.3
0.4
V VCC = VCC Min
IOL = 4.0 mA
V VCC = VCC Min
IOH = –2.0 mA
V VCC = VCC Min
IOH = –100 µA
1.5 V
5.0 5.5 V
12.0 12.6 V
V
23
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