28F016XD 查看數據表（PDF） - Intel

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28F016XD

16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

Intel 

E

28F016XD FLASH MEMORY

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0V, VPP = 12.0V or 5.0V, T = +25°C. These

currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a TTL rise/fall time of <10 ns.

2. ICCES is specified with the device de-selected. If the device is read while in EraseSuspend mode, current draw is the sum

of ICCES and ICC1/ICC4.

3. Block erases, word programs and lock block operations are inhibited when VPP = VPPLK and not guaranteed in the ranges

between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min), and above VPPH2(max).

4. Automatic Power Saving (APS) reduces ICC1 and ICC4 to 1 mA typical in static operation.

5. CMOS inputs are either VCC ± 0.2V or GND ± 0.2V. TTL inputs are either VIL or VIH.

6. Sampled, not 100% tested. Guaranteed by design.

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