2N1489 查看數據表（PDF） - Microsemi Corporation

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产品描述 (功能)

生产厂家

2N1489

NPN SILICON HIGH POWER TRANSISTOR

Microsemi Corporation 

2N1487, 2N1488, 2N1489, 2N1490 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (2)

Forward-Current Transfer Ratio

IC = 1.5 Adc, VCE = 4.0 Vdc

2N1487, 2N1488

2N1489, 2N1490

Collector-Emitter Saturation Voltage

IC = 1.5 Adc, IB = 300 mAdc

2N1487, 2N1488

IC = 1.5 Adc, IB = 100 mAdc

Base-Emitter Voltage

2N1489, 2N1490

IC = 1.5 Adc, VCE = 4.0 Vdc

2N1487, 2N1488

2N1489, 2N1490

DYNAMIC CHARACTERISTICS

Small-Signal Short-Circuit Forward Current

Transfer Ratio Cutoff Frequency

IC = 100 mAdc, VCB = 12 Vdc

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On / Turn-Off Time

VCC = 12 Vdc; IB0 = IB2 = 150 mAdc; IB1 = 300 mAdc; RC = 7.8 Ω

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(on)

fhfb

Cobo

ton + toff

Min. Max. Unit

15

45

25

75

3.0

Vdc

1.0

3.0

Vdc

2.0

500

kc

700

pF

25

µs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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