2N2222AB-1 查看數據表（PDF） - Microsemi Corporation

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2N2222AB-1

SWITCHING TRANSISTOR NPN SILICON

Microsemi Corporation 

A Microsemi Company

580 Pleasant St.

Watertown, MA 02172

2N2222A DIE

Phone: 617-924-9280

Fax: 617-924-1235

DIE SPECIFICATION

SWITCHING TRANSISTOR

NPN SILICON

FEATURES:

n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255

n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS

n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS

n LOW VCE(sat): .3V @ IC = 150 mAdc

PHYSICAL DIMENSIONS

Absolute Maximum Ratings:

Symbol Parameter

Vceo

Vcbo

Vebo

Ic

Tj, Tstg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current- Continuous

Operating Junction & Storage

Temperature Range

Limit Unit

50 Vdc

75 Vdc

6.0 Vdc

800 mAdc

-65 to +200 °C

Packaging Options:

W: Wafer (100% probed) U: Wafer (sample probed)

D: Chip (Waffle Pack)

B: Chip (Vial)

V: Chip (Waffle Pack, 100% visually inspected) X: Other

Processing Options:

Standard: Capable of JANTXV applications (No Suffix)

Suffix C: Commercial

Suffix S: Capable of S-Level equivalent applications

Metallization Options:

Standard: Al Top

Dash 1: Al Top

/ Au Backside (No Dash #)

/ TiPdAg Backside

ORDERING INFORMATION:

PART #: 2N2222A_ _ - _

First Suffix Letter: Packaging Option

Second Suffix Letter: Processing Option

Dash #: Metallization Option

Sertech reserves the right to make changes to any product design, specification, or other information at any time without

prior notice.

Data Sheet, Die, 2N2222A MSW Rev. - 4/15/98

1

MSC0949.PDF

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