2N3232 查看數據表（PDF） - Inchange Semiconductor
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2N3232 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3232
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For audio amplifier and power switching
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R(th) jc
Thermal resistance junction to case
VALUE
80
60
7
7.5
115
150
-65~200
UNIT
V
V
V
A
W
℃
℃
VALUE
1.17
UNIT
℃/W
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