2N3234 查看數據表（PDF） - Inchange Semiconductor
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2N3234 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
VCE(sat) Collector-emitter saturation voltage IC=5A ;IB=0.5A
VBE(on) Base-emitter on voltage
IC=3A ; VCE=4V
ICEO
Collector cut-off current
VCE=80V; IB=0
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=10V
Product Specification
2N3234
MIN
TYP.
MAX UNIT
160
V
1.0
V
1.5
V
0.7
mA
0.1
mA
0.1
mA
18
55
2
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