2N3766 查看數據表（PDF） - Microsemi Corporation
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2N3766 Datasheet PDF : 3 Pages
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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
2N3766
2N3767
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N3766 2N3767
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +250C (1)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IB
IC
PT
Top, Tstg
60
80
80
100
6.0
2.0
4.0
25
-65 to +200
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
RθJC
7.0
1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N3766
2N3767
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 60 Vdc
2N3766
ICEO
VCE = 80 Vdc
2N3767
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc
2N3766
ICEX
VCE = 100 Vdc, VBE = 1.5 Vdc
2N3767
Collector-Base Cutoff Current
VCB = 80 Vdc
2N3766
ICBO
VCB = 100 Vdc
2N3767
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
Min.
60
80
TO-66*
(TO-213AA)
*See Appendix A for
Package Outline
Max.
Unit
Vdc
500
µAdc
500
10
µAdc
10
10
µAdc
10
500
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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