2N3846 查看數據表（PDF） - Microsemi Corporation

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2N3846

NPN POWER SILICON TRANSISTOR

Microsemi Corporation 

2N3846, 2N3847 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (3)

Symbol

Forward-Current Transfer Ratio

IC = 1 Adc; VCE = 3.0 Vdc

IC = 5 Adc; VCE = 3.0 Vdc

hFE

IC = 10 Adc; VCE = 3.0 Vdc

Base-Emitter Voltage

VCE = 3 Vdc; IC = 10 Adc

Base-Emitter Saturated Voltage

IB = 1.6 Adc; IC = 10 Adc

Collector-Emitter Saturated Voltage

IB = 1.6 Adc; IC = 10 Adc

VBE

VBE(sat)

VCE(sat)

DYNAMIC CHARACTERISTICS

Magnitude of Common-Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 1.0 Adc, VCE = 10 Vdc, f = 1 MHz

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 5 Adc, VCE = 10 Vdc, f = 1 kHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

hfe

hfe

Cobo

SWITCHING CHARACTERISTICS

Turn-On Time

VBE(off) ~ -7.5 Vdc; IC = 10 Adc;

ton

IB1 = 2 Adc; IB2 = -2 Adc; RL = 15Ω

Turn-Off Time

VBE(off) ~ -7.5 Vdc; IC = 10 Adc;

toff

IB1 = 2 Adc; IB2 = 2 Adc; RL = 15Ω

SAFE OPERATING AREA

DC Tests

TC = +1000C; VCE = 0 Vdc, IC = 0 Adc (See Figure 3 on Mil-PRF-19500/412)

Test 1

VCE = 7.5 Vdc; IC = 20 Adc; tp = 1.0 s; 1 cycle

Test 2

VCE = 200 Vdc; IC = 100 mAdc; tp = 1.0 s, 1 cycle

Test 3

VCE = 58 Vdc; IC = 1.0 Adc; tp = 1.0 s, 1 cycle

Burnout by Pulsing (2N3847 only)

TC = +1000C; VCE = 300 Vdc; IC = 20 mAdc; tp = 1.0 s, 1 cycle

Unclamped Inductive Sweep

TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 4 on Mil-PRF-19500/412)

Clamped Inductive Sweep

TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 5 on Mil-PRF-19500/412)

3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Min. Max. Unit

70

40

240

12

60

1.20

Vdc

1.30

Vdc

0.75

Vdc

10

35

50

250

pF

750

4

µs

7

µs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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