HUFA76504DK8T 查看數據表（PDF） - Fairchild Semiconductor
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HUFA76504DK8T
Fairchild Semiconductor
HUFA76504DK8T Datasheet PDF : 13 Pages
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HUFA76504DK8
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 12)
ID = 250µA, VGS = 0V , TA = -40oC (Figure 12)
VDS = 75V, VGS = 0V
VDS = 70V, VGS = 0V, TA = 150oC
VGS = ±16V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 11)
ID = 2.5A, VGS = 10V (Figures 9, 10)
ID = 1.1A, VGS = 5V (Figure 9)
ID = 1.1A, VGS = 4.5V (Figure 9)
Thermal Resistance Junction to Lead
Thermal Resistance Junction to Ambi-
ent
RθJL
RθJA
Pad Area = 0.50 in2 (323 mm2) (Note 2)
Pad Area = 0.027 in2 (17.4 mm2) (Figure 23)
Pad Area = 0.006 in2 (3.87 mm2) (Figure 23)
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 40V, ID = 1.1A
VGS = 4.5V, RGS = 43Ω
(Figures 15, 21, 22)
VDD = 40V, ID = 2.5A
VGS = 10V,
RGS = 47Ω
(Figures 16, 21, 22)
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 40V,
ID = 1.1A,
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
VSD
trr
QRR
TEST CONDITIONS
ISD =1.1A
ISD = 0.7A
ISD = 5.0A, dISD/dt = 100A/µs
ISD = 5.0A, dISD/dt = 100A/µs
©2001 Fairchild Semiconductor Corporation
MIN TYP MAX UNITS
80
-
-
V
70
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100 nA
1
-
3
V
-
0.173 0.200
Ω
-
0.193 0.222
Ω
-
0.200 0.230
Ω
-
-
25
oC/W
-
-
50
oC/W
-
-
191 oC/W
-
-
228 oC/W
-
-
100
ns
-
27
-
ns
-
40
-
ns
-
73
-
ns
-
31
-
ns
-
-
160
ns
-
-
41
ns
-
10
-
ns
-
18
-
ns
-
115
-
ns
-
36
-
ns
-
-
230
ns
-
6.6
10
nC
-
3.4
5.4
nC
-
0.3
0.5
nC
-
0.8
-
nC
-
1.4
-
nC
-
270
-
pF
-
62
-
pF
-
11
-
pF
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.00
62
115
UNITS
V
V
ns
nC
Rev. A, June 4, 2001
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