HUFA76504DK8 查看數據表（PDF） - Fairchild Semiconductor

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HUFA76504DK8

2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Fairchild Semiconductor 

HUFA76504DK8

Typical Performance Curves (Continued)

200

SINGLE PULSE

100

TJ

TA

=

=

MAX RATED

25oC

10

100µs

OPERATION IN THIS

1

AREA MAY BE

LIMITED BY rDS(ON)

1ms

RθJA = 228oC/W

0.1

10ms

1

10

100 200

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

20

ItfASRVTA==R(0LT)I(NIAGST)/J(1=.31*R50AoTCED BVDSS - VDD)

If R ≠ 0

10 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

STARTING TJ = 25oC

STARTING TJ = 150oC

1

0.01

0.1

1

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

10

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

8

VDD = 15V

6

4

TJ = 25oC

2

TJ = 150oC

TJ = -55oC

0

2.0

2.5

3.0

3.5

4.0

4.5

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

10

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

8 TA = 25oC

VGS = 4.5V

6

VGS = 10V

4

2

VGS = 3.5V

VGS = 3V

0

0

1

2

3

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 8. SATURATION CHARACTERISTICS

350

300

ID = 2.5A

250

ID = 1.1A

200

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

2.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

2.0

VGS = 10V, ID = 2.5A

1.5

1.0

150

2

4

6

8

10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

©2001 Fairchild Semiconductor Corporation

0.5

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Rev. A, June 4, 2001

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