2N4170 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
生产厂家
2N4170 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Silicon Controlled Rectifiers
Reverse Blocking Trlode Thyristors
.., multi-purpose PNPN silicon controlled rectifiers suited for Industrial, consumer,
and military applications. Offered In a choice of space-saving, economical pack-
ages for mounting versatility.
• Uniform Low-Level Noise-Immune Gate Triggering — IQT - 10 mA (Typ) @
TC = WC
» LowForward "On" Voltage — vj - 1V (Typ) @ 5 Amp @ 25'C
• High Surge-Current Capability —ITSM - 100 Amp Peak
• Shorted Emitter Construction
2N416S
thru
2N4174
2N4184
thru
2N4190
SCRs
8 AMPERES RMS
60 thru 800 VOLTS
MAXIMUM FIATINGS (Apply over operating temperature range and for all case types
unless otherwise noted.)
Rating
Symbol Value
Unit
'Peak Repetitive Forward and RevarM Blacking
Voltage, Note 1
2N4168, 84,
ZN4189, 86,
2N4170, 86,
2N4172, 88,
2N4174, 90
VORM
Volts
or
50
VRRM
100
200
400
600
Forward Current RMS
•Peak Forward Surge Current
{One cycle, 60 Hi, Tj = -40 to +100-C)
ft(RMS)
8
"TSM
100
Amps
Amps
Circuit Fusing
[t - 8.3 ms)
|2t
40
A2»
•Peak Oats Power
PGM
5
Watts
•Average Gate Power
•Peak Gate Currant
PQ(AV)
0.6
IGM
2
Wan
Amps
Peak Gate Voltage, Note 2
•Operating Temperature Range
•Storage Temperature Range
Stud Torque
VGM
TJ
Tstg
10
Volts
-40 to +100 °C
-40 to +150 •c
16
In. Ib.
-oK
CASE 88-01
2N4168 thru 2N4174
CASB87L-OZ
2N4184 thru 2N4190
\ .SemM. i mduUon rettntu lh« right (n thangt lesl conditions, pwamicter limitt ;md packug* Jirneminns without notice
liilurmulifln l'uni»ficd by NI SumM/omhicfun ii twlwved to h« holh uccurid* ,iml rdiuhl* ,il the lim« ul guirtf lt> pr«». However M
icini Ci nJtn.li>f> i^MiiiKi thi rcvpniijjbiliiy Kir :iny ernin >>r uinissitiiM Jisvuvured in ili ifc>e .N I .Stun-*. v;niJiKli rs ciKuur.'i'iel
n n irtrn In ii-iih 'h il I;il.i-hi.cl3 ire Current h<frre |)lntin«
Share Link: 