AS6UA25616-TC 查看數據表（PDF） - Alliance Semiconductor

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AS6UA25616-TC

2.3V to 3.6V 256K×16 Intelliwatt™ low-power CMOS SRAM with one chip enable

Alliance Semiconductor 

Write cycle (over the operating range)11

–55

Parameter

Symbol Min Max

Write cycle time

tWC

55

–

Chip enable to write end

tCW

40

–

Address setup to write end

tAW

40

–

Address setup time

tAS

0

–

Write pulse width

tWP

35

–

Address hold from end of write

tAH

0

–

Data valid to write end

tDW

25

–

Data hold time

tDH

0

–

Write enable to output in high Z tWZ

0

20

Output active from write end

tOW

5

–

UB/LB low to end of write

tBW

35

–

®

–70

Min Max Unit

70

–

ns

60

–

ns

60

–

ns

0

–

ns

55

–

ns

0

–

ns

30

–

ns

0

–

ns

0

20

ns

5

–

ns

55

–

ns

AS6UA25616

Notes

12

12

4, 5

4, 5

4, 5

Write waveform 1 (WE controlled)10,11

Address

CS

LB, UB

tAS

WE

tWC

tCW

tBW

tAW

DIN

DOUT

tWZ

Data undefined

tAH

tWP

tDW

tDH

Data valid

tOW

High Z

Write waveform 2 (CS controlled)10,11

Address

CS

LB, UB

WE

DIN

DOUT

tAS

tCLZ

High Z

tWC

tCW

tAW

tBW

tWP

tDW

tWZ

Data undefined

tAH

tDH

Data valid

tOW

High Z

10/6/00

ALLIANCE SEMICONDUCTOR

5

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