AS6UA5128(2000) 查看數據表（PDF） - Alliance Semiconductor

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AS6UA5128
(Rev.:2000)

2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM

Alliance Semiconductor 

Write cycle (over the operating range)11

–55

Parameter

Symbol Min Max

Write cycle time

tWC

55

–

Chip select to write end

tCW

40

–

Address setup to write end

tAW

40

–

Address setup time

tAS

0

–

Write pulse width

tWP

35

–

Address hold from end of write tAH

0

–

Data valid to write end

tDW

25

–

Data hold time

tDH

0

–

Write enable to output in high Z tWZ

0

20

Output active from write end

tOW

5

–

Write waveform 1 (WE controlled)10,11

Address

tWC

tAW

tWP

WE

tAS

DIN

tWZ

DOUT

®

–70

Min Max Unit

70

–

ns

60

–

ns

60

–

ns

0

–

ns

55

–

ns

0

–

ns

30

–

ns

0

–

ns

0

20

ns

5

–

ns

tAH

tDW

Data valid

tDH

tOW

Write waveform 2 (CS controlled)10,11

tWC

tAW

Address

tAS

tCW

CS

tWP

WE

tWZ

DIN

DOUT

tDW

Data valid

tAH

tDH

AS6UA5128

Notes

12

12

4, 5

4, 5

4, 5

10/6/00

ALLIANCE SEMICONDUCTOR

5

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