CR3EM 查看數據表（PDF） - MITSUBISHI ELECTRIC
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CR3EM Datasheet PDF : 5 Pages
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GATE CHARACTERISTICS
101
7 VFGM = 6V
PGM = 2W
5
4
3 VGD = 1.5V
2
PG(AV) = 0.2W
100
IGT = 30mA
7
(Tj = 25°C)
5
4
3
2
10–1
101 2 3 4 5 7 102 2 3 4 5 7 103
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.6
1.4
11000.....,,,,,,,20864 ,,,,,,,,,,,,,,,,,,,,,D,,,,,,,IS,,,,,,,TR,,,,,,,IBTUY,,,,,,,TPIIOC,,,,,,,NAL,,,,,,,E,,,,,,,XAMPLE
0.2
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
8
7
6
120° 180°
5
90°
4
θ = 30° 60°
3
θ
2
360°
RESISTIVE,
1
INDUCTIVE
0
LOADS
0
1.0 2.0 3.0 4.0 5.0
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3EM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
10–3 2 3
5 710–2 2 3
5 710–1 2 3
5 7 100
TIME (s)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
120
360°
100
80
60 θ = 30°
60°
40 90°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
WITHOUT FIN
20 120°
180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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