CR3EM 查看數據表（PDF） - MITSUBISHI ELECTRIC
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CR3EM Datasheet PDF : 5 Pages
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MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
8
7 θθ
180°
120°
6 360°
90°
5
RESISTIVE
LOADS
60°
4
θ = 30°
3
2
1
0
0 1.0 2.0 3.0 4.0 5.0
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
160
VD = 12V
140
Ta = 25°C
120
100
80
60
40
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE TO CATHODE RESISTANCE (kΩ)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3EM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
WITHOUT FIN
140
θθ
120
360°
100
RESISTIVE LOADS
NATURAL
80
CONVECTION
60 θ = 30°
60°
40
90°
20 120°
180°
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
80
70
60
50
40
30
20
10
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE TRIGGER CURRENT (mA)
Feb.1999
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