2N5490 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2N5490 Datasheet PDF : 3 Pages
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Product Specification
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Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustioning voltage
2N5490/5494
2N5492
IC=0.1A ;IB=0
2N5496
VCEsat
Collector-emitter
saturation voltage
2N5490
2N5492
2N5494
IC=2.0A;IB=0.2A
IC=2.5A;IB=0.25A
IC=3.0A;IB=0.3A
2N5496
IC=3.5A;IB=0.35A
2N5490
IC=2.0A ; VCE=4V
2N5492
VBE
Base-emitter on voltage
2N5494
IC=2.5A ; VCE=4V
IC=3.0A ; VCE=4V
2N5496
IC=3.5A ; VCE=4V
2N5492
VCE=70V;VBE=1.5V
ICEV
Collector cut-off current 2N5490/5494 VCE=55V;VBE=1.5V
2N5496
ICER
Collector cut-off current
VCE=85V;VBE=1.5V
VCE=Rated VCEO;RBE=100Ω
IEBO
Emitter cut-off current
2N5490
hFE
DC current gain
2N5492
2N5494
VEB=5V; IC=0
IC=2.0A ; VCE=4V
IC=2.5A ; VCE=4V
IC=3.0A ; VCE=4V
2N5496
IC=3.5A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=4V
MIN TYP. MAX UNIT
40
55
V
70
1.0
V
1.1
1.3
V
1.5
1.7
1.0 mA
0.5 mA
1.0 mA
20
100
0.8
MHz
JMnic
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