2N5612 查看數據表（PDF） - Inchange Semiconductor
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2N5612 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N5606
VCBO
Collector-base voltage 2N5608/5610 Open emitter
2N5612
2N5606
VCEO
Collector-emitter voltage 2N5608/5610 Open base
2N5612
VEBO
Emitter-base voltage
Open collector
IC
Collector current
PD
Total power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
100
120
60
80
100
5
5
25
150
-65~150
UNIT
V
V
V
A
W
℃
℃
VALUE
4.37
UNIT
℃/W
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