2N5655 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
2N5655 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5655 2N5656 2N5657
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5655
250
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5656 IC=0.1A; IB=0;L=50mH
300
V
2N5657
350
VCEsat-1 Collector-emitter saturation voltage IC=100mA ;IB=10mA
1.0
V
VCEsat-2 Collector-emitter saturation voltage IC=250mA ;IB=25mA
2.5
V
VCEsat-3 Collector-emitter saturation voltage IC=500mA ;IB=100mA
10
V
VBE
Base-emitter on voltage
IC=100mA ; VCE=10V
1.0
V
2N5655 VCE=150V; IB=0
ICEO
Collector cut-off current 2N5656 VCE=200V; IB=0
0.1 mA
2N5657 VCE=250V; IB=0
固I电NC半H导A体NGE SEMICONDUCTOR 2N5655 VCB=275V; IE=0
ICBO
Collector cut-off current 2N5656 VCB=325V; IE=0
2N5657 VCB=375V; IE=0
ICEX
Collector cut-off current
VCE= Rated VCEO; VBE(off)=1.5V
TC=100℃
IEBO
Emitter cut-off current
VEB=6V; IC=0
10 μA
0.1
1.0
mA
10 μA
hFE-1
DC current gain
IC=50mA ; VCE=10V
25
hFE-2
DC current gain
IC=100mA ; VCE=10V
30
250
hFE-3
DC current gain
IC=250mA ; VCE=10V
15
hFE-4
DC current gain
IC=500mA ; VCE=10V
5
fT
Transition frequency
IC=50mA ; VCE=10V;f=10MHz
10
MHz
COB
Output capacitance
f=100kHz ; VCB=10V;IE=0
25
pF
2
Share Link: 