2N5676 查看數據表（PDF） - Inchange Semiconductor
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2N5676 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBEsat Base-emitter saturation voltage
IC=-1A ;IB=-0.1A
VBE
Base-emitter on voltage
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IC=-1A ; VCE=-5V
VCE=-50V; IB=0
VCB=-125V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
hFE-2
DC current gain
IC=-0.5A ; VCE=-5V
fT
Transition frequency
IC=-100mA;VCE=10V
Product Specification
2N5676
MIN TYP. MAX UNIT
-100
V
-0.5
V
-1.2
V
-1.2
V
-0.5 mA
-0.1 mA
-0.1 mA
50
50
150
50
MHz
2
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