2N5737 查看數據表（PDF） - Inchange Semiconductor

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产品描述 (功能)

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2N5737

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2N5737

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -60V(Min.)

·Low Collector Saturation Voltage-

: VCE(sat)= -0.5V(Max.)@ IC= -5A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for general-purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-20

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=100℃

TJ

Junction Temperature

Tstg

Storage Temperature

-4

A

50

W

150

℃

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-a Thermal Resistance,Junction to Ambient 0.5 ℃/W

isc Website：www.iscsemi.cn

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