2N5656 查看數據表（PDF） - SavantIC Semiconductor

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2N5656

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2N5655 2N5656 2N5657

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5655

2N5656 IC=0.1A; IB=0;L=50mH

2N5657

VCEsat-1

VCEsat-2

VCEsat-3

VBE

ICEO

ICBO

ICEX

IEBO

hFE-1

hFE-2

hFE-3

hFE-4

fT

COB

Collector-emitter saturation voltage IC=100mA ;IB=10mA

Collector-emitter saturation voltage IC=250mA ;IB=25mA

Collector-emitter saturation voltage IC=500mA ;IB=100mA

Base-emitter on voltage

IC=100mA ; VCE=10V

2N5655 VCE=150V; IB=0

Collector cut-off current 2N5656 VCE=200V; IB=0

2N5657 VCE=250V; IB=0

2N5655 VCB=275V; IE=0

Collector cut-off current 2N5656 VCB=325V; IE=0

2N5657

Collector cut-off current

Emitter cut-off current

VCB=375V; IE=0

VCE= Rated VCEO; VBE(off)=1.5V

TC=100

VEB=6V; IC=0

DC current gain

IC=50mA ; VCE=10V

DC current gain

IC=100mA ; VCE=10V

DC current gain

IC=250mA ; VCE=10V

DC current gain

IC=500mA ; VCE=10V

Transition frequency

IC=50mA ; VCE=10V;f=10MHz

Output capacitance

f=100kHz ; VCB=10V;IE=0

MIN TYP. MAX UNIT

250

300

V

350

1.0

V

2.5

V

10

V

1.0

V

0.1 mA

10

µA

0.1

1.0

mA

10

µA

25

30

250

15

5

10

MHz

25

pF

2

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