2N6027 查看數據表（PDF） - ON Semiconductor

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2N6027

Programmable Unijunction Transistor

ON Semiconductor 

2N6027, 2N6028

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Power Dissipation*

Derate Above 25°C

DC Forward Anode Current*

Derate Above 25°C

PF

1/qJA

IT

300

mW

4.0

mW/°C

150

mA

2.67

mA/°C

DC Gate Current*

Repetitive Peak Forward Current

100 ms Pulse Width, 1% Duty Cycle

20 ms Pulse Width, 1% Duty Cycle*

IG

ITRM

"50

mA

A

1.0

2.0

Non−Repetitive Peak Forward Current

10 ms Pulse Width

ITSM

5.0

A

Gate to Cathode Forward Voltage*

Gate to Cathode Reverse Voltage*

Gate to Anode Reverse Voltage*

Anode to Cathode Voltage* (Note 1)

Capacitive Discharge Energy (Note 2)

VGKF

VGKR

VGAR

VAK

E

40

V

*5.0

V

40

V

±40

V

250

mJ

Power Dissipation (Note 3)

PD

300

mW

Operating Temperature

TOPR

−50 to +100

°C

Junction Temperature

TJ

−50 to +125

°C

Storage Temperature Range

Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

*Indicates JEDEC Registered Data

1. Anode positive, RGA = 1000 W

Anode negative, RGA = open

2. E = 0.5  CV2 capacitor discharge energy limiting resistor and repetition.

3. Derate current and power above 25°C.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes

(t1/16″ from case, 10 seconds maximum)

Symbol

RqJC

RqJA

TL

Max

Unit

75

°C/W

200

°C/W

260

°C

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