2N5838 查看數據表（PDF） - SavantIC Semiconductor

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2N5838

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2N5838 2N5839 2N5840

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N5838

250

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5839

IC=0.1A ;IB=0

275

V

2N5840

350

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A

VBEsat

Base-emitter saturation voltage

IC=2A; IB=0.4A

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

ICEV

Collector cut-off current

VCE= Rated VCEO; VBE(off)=1.5V

IEBO

Emitter cut-off current

VEB=5V; IC=0

2N5838

IC=3A ; VCE=3V

8

hFE

DC current gain

2N5839/5840 IC=2A ; VCE=3V

10

fT

Transition frequency

IC=1A ; VCE=10V;f=1.0MHz

5

0.8

V

1.5

V

1.0

mA

1.0

mA

1.0

mA

40

50

MHz

2

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