2N5839 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2N5839 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5838 2N5839 2N5840
DESCRIPTION
·With TO-3 package
·Low collector-emitter saturation voltage
APPLICATIONS
·For use in switching power supply applications
and other inductive switching circuits.
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N5838
VCBO
Collector-base voltage
2N5839
2N5840
2N5838
VCEO
Collector-emitter voltage 2N5839
2N5840
VEBO
Emitter-base voltage
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
275
300
375
250
275
350
6
3
100
150
-65~200
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
JMnic
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