2N6056 查看數據表（PDF） - ON Semiconductor
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2N6056 Datasheet PDF : 8 Pages
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2N6056
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
-ā30 V
D1 MUST BE FAST RECOVERY TYPE, e.g.,
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RC
TUT
SCOPE
V2
approx
RB
+ā12 V
0
51
D1
≈ 8.0 k ≈ 50
V1
approx
-ā8.0 V
25 µs
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
+ā4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode, polarities and input pulses.
Figure 2. Switching Times Test Circuit
5.0
3.0
ts
2.0
1.0
tf
0.7
0.5
0.3
0.2
VCC = 30 V
IC/IB = 250
tr
IB1 = IB2
0.1 TJ = 25°C
td @ VBE(off) = 0
0.07
0.05
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05 0.02
0.03
0.01
0.02 SINGLE PULSE
0.01
0.1
0.2 0.3 0.5 0.7 1.0
RθJC(t) = r(t) RθJC
RθJC = 1.75°C/W Ċ 2N6056
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
2.0 3.0
5.0 7.0 10
20 30
t, TIME (ms)
Figure 4. Thermal Response
50 70 100
200 300 500 700 1000
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