2N6130 查看數據表（PDF） - Inchange Semiconductor
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2N6130 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6129 2N6130 2N6131
DESCRIPTION
·With TO-220 package
·High power dissipation
·Complement to PNP type :
2N6132 2N6133 2N6134
APPLICATIONS
·Power amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
2N6129
VCBO
Collector-base voltage 2N6130
2N6131
2N6129
VCEO
Collector-emitter voltage 2N6130
2N6131
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
40
60
80
40
60
80
5
7
3
50
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
2.5
UNIT
℃/W
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