2N6217 查看數據表（PDF） - Inchange Semiconductor
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2N6217 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6216 2N6217
DESCRIPTION
·With TO-3 package
·High current ,high power dissipation
APPLICATIONS
·For use in switching and linear
power applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N6216
2N6217
Open emitter
VCEO
Collector-emitter voltage
2N6216
2N6217
Open base
VEBO
IC
PD
Emitter-base voltage
Collector current
Total power dissipation
Open collector
TC=100℃
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
200
180
150
140
7
10
71
150
-65~200
UNIT
V
V
V
A
W
℃
℃
VALUE
1.46
UNIT
℃/W
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