2N6251 查看數據表（PDF） - Inchange Semiconductor
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2N6251 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6249 2N6250 2N6251
DESCRIPTION
·With TO-3 package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·High voltage inverters
·Switching regulators
·Line operated amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3) and symbol
体 Absolute maximum ratings(Ta=25℃)
固电半导 SEMICONDUCTOR SYMBOL
PARAMETER
2N6249
VCBO
Collector-base voltage
2N6250
2N6251
INCHANG2N6249
VCEO
Collector-emitter voltage 2N6250
CONDITIONS
Open emitter
Open base
VALUE
300
375
450
200
275
UNIT
V
V
2N6251
350
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
30
A
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
10
A
175
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.0
UNIT
℃/W
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