2N6251 查看數據表（PDF） - Inchange Semiconductor
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2N6251 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6249 2N6250 2N6251
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6249
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6250 IC=200mA ; IB=0
2N6251
MIN TYP. MAX UNIT
200
275
V
350
VCE(sat)
Collector-emitter
saturation voltage
2N6249 IC=10A;IB=1.0A
2N6250 IC=10A;IB=1.25 A
2N6251 IC=10A;IB=1.67 A
1.5
V
2N6249 IC=10A;IB=1.0A
VBE(sat)
Base-emitter
saturation voltage
2N6250 IC=10A;IB=1.25 A
2.25 V
2N6251 IC=10A;IB=1.67 A
ICEV
ICEO
IEBO
Collector cut-off
VCE=RatedVCEV;VBE=-1.5V
5.0
体 current
TC=125℃
10
固电半导 SEMICONDUCTOR 2N6249 VCE=150V;IB=0
Collector cut-off
current
2N6250 VCE=225V;IB=0
5.0
2N6251 VCE=300V;IB=0
INCHANG Emitter cut-off current
VEB=6V; IC=0
1.0
mA
mA
mA
2N6249
10
50
hFE
DC current gain
2N6250 IC=10A ; VCE=3V
8
50
2N6251
6
50
fT
Transition frequency
IC=1A ; VCE=10V，f=1MHz
2.5
Is/b
Second breakdown collector current VCE=30V,t=1.0s,
With base forward biased
Nonrepetitive
5.8
Switching times
tr
Rise time
For 2N6249
IC=10A; IB1=-IB2=1.0A;VCC=200V
ts
Storage time
For 2N6250
IC=10A;IB1=-IB2=1.25A;VCC=200V
tf
Fall time
For 2N6251
IC=10A;IB1=-IB2=1.67A;VCC=200V
MHz
A
2.0 μs
3.5 μs
1.0 μs
2
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