2N6394(2001) 查看數據表（PDF） - ON Semiconductor

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2N6394
(Rev.:2001)

Silicon Controlled Rectifiers Reverse Blocking Thyristors

ON Semiconductor 

2N6394 Series

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Thermal Resistance, Junction to Case

RθJC

2.0

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

TL

260

Unit

°C/W

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

OFF CHARACTERISTICS

*Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, Gate Open)

TJ = 25°C

TJ = 125°C

ON CHARACTERISTICS

IDRM, IRRM

*Peak Forward On–State Voltage (Note 2.)

VTM

(ITM = 24 A Peak)

*Gate Trigger Current (Continuous dc)

IGT

(VD = 12 Vdc, RL = 100 Ohms)

*Gate Trigger Voltage (Continuous dc)

VGT

(VD = 12 Vdc, RL = 100 Ohms)

Gate Non–Trigger Voltage

VGD

(VD = 12 Vdc, RL = 100 Ohms, TJ = 125°C)

*Holding Current

IH

(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

Turn-On Time

tgt

(ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM)

Turn-Off Time (VD = Rated VDRM)

tq

(ITM = 12 A, IR = 12 A)

(ITM = 12 A, IR = 12 A, TJ = 125°C)

DYNAMIC CHARACTERISTICS

Critical Rate–of–Rise of Off-State Voltage Exponential

(VD = Rated VDRM, TJ = 125°C)

*Indicates JEDEC Registered Data

2. Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

dv/dt

Min

Typ

Max

Unit

–

–

10

µA

–

–

2.0

mA

–

1.7

2.2

Volts

–

5.0

30

mA

–

0.7

1.5

Volts

0.2

–

–

Volts

–

6.0

50

mA

–

1.0

2.0

µs

µs

–

15

–

–

35

–

–

50

–

V/µs

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