2N6357 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2N6357 Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N6357
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
60
5
20
0.5
150
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
VALUE
1.09
UNIT
℃/W
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