2N6357 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2N6357 Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10A ;IB=40mA
VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=1A
VBE sat Base-emitter saturation voltage
VBE
Base-emitter on voltage
ICEO
Collector cut-off current
IC=20A ;IB=1A
IC=10A ; VCE=4V
VCE=60V;IB=0
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=5V
hFE-2
DC current gain
IC=20A ; VCE=5V
Product Specification
2N6357
MIN TYP. MAX UNIT
60
V
2.0
V
4.0
V
4.0
V
2.8
V
1.0 mA
0.5 mA
5.0 mA
500
5000
100
2
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