2N6704 查看數據表（PDF） - Inchange Semiconductor
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2N6704 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6704
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB=B 0.7A
VBE(sat) Base-Emitter Saturation Voltage
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A; IB=B 0.4A
VCEV= 180V;VBE=-1.5V
VCEV= 180V;VBE=-1.5V;TJ= 125℃
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
Switching Times
IE= 0; VCB= 10V, ftest= 0.1MHz
IC= 0.5A; VCE= 10V, ftest= 1MHz
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 4A; IB1= -IB2= 0.4A,VBE= -4V
MIN MAX UNIT
130
V
0.7
V
1.5
V
1.4
V
0.1
1.0
mA
0.1
mA
30
20
50
150
pF
50
200 MHz
0.1
μs
0.25 μs
1
μs
0.5
μs
isc Website：www.iscsemi.cn
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