2N6784 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
生产厂家
2N6784 Datasheet PDF : 2 Pages
| |||
Absolute Maximum Ratings Tc - 25°C. Unless Otherwise Specified
2N6784
UNITS
Drain to Source Breakdown Voltage (Note 1)
Vrjs
200
V
Drain to Gate Voltage (RGS = 20kii) (Note 1)
VDGR
200
V
Continuous Drain Current
Tc = 100°C
ID
2.25
A
1.5
A
Pulsed Drain Current (Note 3)
IDM
9
A
Gate to Source Voltage
VQS
±20
V
Continuous Source Current (Body Diode)
Is
2.25
A
Pulse Source Current (Body Diode)
ISM
9
A
Maximum Power Dissipation
PD
15
W
Linear Derating Factor
0.12
W/°C
Operating and Storage Temperature
Tj TSTG
-55 to 150
°C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
T|_
300
°c
Tpkg
260
°c
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation oi the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Tj = 25°Cto125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
i Drain to Source On Resistance (Note 2)
i
Diode Forward Voltage
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BVDSS ID = 0.25mA, VGS=0V
VGS(TH)
toss
VGS = VDS.ID = °5mA
VDS = 200V, VGS = °v
VDS = 160V, VGS = °V, Tc = 125°C
VDS(ON)
!GSS
rDS(ON)
VSD
9fs
td(ON)
tr
td(OFF)
ID = 2.25A, VGS = 10V
VGS =±20V
ID=1.5A,VGS=10V.TA = 25°C
ID = 1 .5A, VGS = 10V. TA = 125°C
ls = 2.25A, VGS =0V
VDS = 5V,ID = 1.5A
VDD = 75V, ID = 1 .5A, RG = son
(Figure 1 7) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
tf
CISS
COSS
VDS =25V. VGS = 0V, f = 1 MHz
(Figure 1 4)
CRSS
Rejc
RBJA
Free Air Operation
MIN TYP MAX UNITS
200
-
-
V
2
-
4
v
-
-
250
HA
-
-
1000 HA
-
-
3.37
V
-
-
±100
nA
-
1.0 1.500
fi
-
-
2.81
ii
0.7
-
1.5
V
0.9
1.3
2.7
S
-
15
ns
-
20
ns
-
-
30
ns
-
-
20
ns
60
135
200
PF
20
60
80
pF
5
16
25
PF
-
-
8.33 °C/W
-
-
175 °C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Reverse Recovery Time
Reverse Recovered Charge
<rr
Tj = 150°C, ISD = 2.25A. dlsD/dt= 100A/jis
290
QRR Tj = 1 50°C, ISD = 2.25A, dlso/dt = 1 0OA/^is
(-
2.0
-
NOTES:
2. Pulse test: pulse width < SOOfis, duty cycle < 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal impedance curve (Figure 3).
UNITS ~]
ns
nc |
Share Link: 