2N7002K-AU 查看數據表（PDF） - PANJIT INTERNATIONAL

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产品描述 (功能)

生产厂家

2N7002K-AU

60V N-Channel Enhancement Mode MOSFET - ESD Protected

PANJIT INTERNATIONAL 

2N7002K-AU

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• RDS(ON), VGS@10V,IDS@500mA=3Ω

• RDS(ON), VGS@4.5V,IDS@200mA=4Ω

SOT-23

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

• Acqire quality system certificate : TS16949

• AEC-Q101 qualified

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MECHANICAL DATA

• Case: SOT-23 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Apporx. Weight: 0.0003 ounces, 0.0084 grams

• Marking : K72

0.120(3.04)

0.110(2.80)

0.056(1.40)

0.047(1.20)

0.079(2.00)

0.070(1.80)

0.004(0.10)

0.000(0.00)

0.020(0.50)

0.013(0.35)

Unit：inch(mm)

0.008(0.20)

0.003(0.08)

0.044(1.10)

0.035(0.90)

Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )

Drain-Source Voltage

PARAMETER

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current 1)

Maxi mum Power Di ssi pation

O p e ra t i ng J unc t i o n a nd S t o ra g e Te mp e r a tur e Ra ng e

Junction-to Ambient Thermal Resistance(PCB mounted)2

S ym b o l

V DS

V GS

ID

TA= 2 5 OC

TA= 7 5 OC

IDM

PD

TJ,TSTG

RθJA

Limit

60

+20

300

2000

350

210

-55 to + 150

357

Uni ts

V

V

mA

mA

mW

OC

OC /W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

October 29,2010-REV.02

PAGE . 1

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