BS170KL-TR1 查看數據表（PDF） - Vishay Semiconductors
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BS170KL-TR1 Datasheet PDF : 5 Pages
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2N7000KL/BS170KL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
2 at VGS = 10 V
60
4 at VGS = 4.5 V
VGS(th) (V)
1.0 to 2.5
ID (A)
0.47
0.33
FEATURES
• TrenchFET® Power MOSFET
• ESD Protected: 2000 V
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
Pb-free
Available
RoHS*
COMPLIANT
• Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
• Battery Operated Systems
TO-226AA
TO-92-18RM
(TO-92)
(TO-18 Lead Form)
D
S
1
G
2
D
3
Device Marking
Front View
“S” 2N
7000KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D
1
G
2
S
3
Device Marking
Front View
100
“S” BS
G
170KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
Top View
Top View
S
Ordering Information: 2N7000KL-TR1
Ordering Information: BS170KL-TR1
2N7000KL-TR1-E3 (Lead (Pb)-free)
BS170KL-TR1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)b
Pulsed Drain Currenta
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
Notes:
a. Pulse width limited by maximum junction temperature.
Limit
60
± 20
0.47
0.37
1.0
0.8
0.51
158
- 55 to 150
Unit
V
A
W
°C/W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
www.vishay.com
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