BS170KL 查看數據表（PDF） - Vishay Semiconductors
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BS170KL Datasheet PDF : 5 Pages
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2N7000KL/BS170KL
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-Resistanceb
rDS(on)
Forward Transconductanceb
gfs
Diode Forward Voltage
VSD
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Time
td(on)
tr
Turn-Off Time
td(off)
tf
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Test Conditions
VGS = 0 V, ID = 10 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 10 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VGS = 10 V, VDS = 7.5 V
VGS = 4.5 V, VDS = 10 V
VGS = 10 V, ID = 0.5 A
VGS = 4.5 V, ID = 0.2 A
VDS = 10 V, ID = 0.5 A
IS = 0.3 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V
ID ≅ 0.25 A
VDD = 30 V, RL = 150 Ω
ID ≅ 0.2 A, VGEN = 10 V, RG = 10 Ω
Limits
Min
Typ
Max Unit
60
V
1
2.0
2.5
±1
1
µA
10
0.8
A
0.5
1.1
2
Ω
1.6
4
550
ms
0.87
1.3
V
0.4
0.6
nC
0.11
0.15
pF
173
3.8
10
4.8
15
ns
12.8
20
9.6
15
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
1.2
6V
VGS = 10, 7 V
0.8
5V
0.9
0.6
0.4
0.2
0.0
0
4V
3V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.6
0.3
0
0
TJ = - 55 °C
25 °C
125 °C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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2
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
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