BS170KL-TR1 查看數據表（PDF） - Vishay Semiconductors
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BS170KL-TR1 Datasheet PDF : 5 Pages
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2N7000KL/BS170KL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
40
3.5
32
3.0
2.5
24
2.0
VGS = 4.5 V
1.5
16
VGS = 10 V
1.0
8
0.5
0.0
0
0.0
0.2
0.4
0.6
0.8
1.0
0
ID - Drain Current (mA)
On-Resistance vs. Drain Current
7
2.0
6
VDS = 10 V
ID = 250 mA
1.6
5
4
1.2
3
0.8
2
0.4
1
VGS = 0 V
Ciss
Crss
Coss
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Capacitance
VGS = 10 V at 500 mA
VGS = 4.5 V
at 200 mA
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Qg - Total Gate Charge (nC)
Gate Charge
0.0
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
5
VGS = 0 V
4
100
3
TJ = 125 °C
10
TJ = 25 °C
TJ = - 55 °C
1
0.00
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2
ID = 500 mA
ID = 200 mA
1
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
www.vishay.com
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