BS170KL-TR1 查看數據表（PDF） - Vishay Semiconductors
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BS170KL-TR1 Datasheet PDF : 5 Pages
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2N7000KL/BS170KL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
20
0.2
16
ID = 250 µA
0.0
12
- 0.2
8
- 0.4
4
- 0.6
TA = 25 °C
- 0.8
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
Threshold Voltage Variance Over Temperature
0
0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by rDS(on)*
IDM Limited
1
0.1
ID(on)
Limited
1 ms
10 ms
100 ms
1s
0.01
10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1 0.05
PDM
0.02
0.01
10-4
Single Pulse
10-3
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 350 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72705.
www.vishay.com
4
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
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